complementary silicon plastic power transistors . . . designed for use in general purpose amplifier and switching applications. ? collectoremitter saturation voltage e v ce(sat) = 1.5 vdc (max) @ i c = 6.0 adc ? collectoremitter sustaining voltage e v ceo(sus) = 60 vdc (min) e tip41a, tip42a = 80 vdc (min) e tip41b, tip42b = 100 vdc (min) e tip41c, tip42c ? high current gain e bandwidth product f t = 3.0 mhz (min) @ i c = 500 madc ? compact to220 ab package ??????????????????????? ??????????????????????? *maximum ratings ??????????? ? ????????? ? ??????????? rating ??? ? ? ? ??? symbol ???? ? ?? ? ???? tip41a tip42a ??? ? ? ? ??? tip41b tip42b ???? ? ?? ? ???? tip41c tip42c ??? ? ? ? ??? unit ??????????? ??????????? collectoremitter voltage ??? ??? v ceo ???? ???? 60 ??? ??? 80 ???? ???? 100 ??? ??? vdc ??????????? ??????????? collectorbase voltage ??? ??? v cb ???? ???? 60 ??? ??? 80 ???? ???? 100 ??? ??? vdc ??????????? ??????????? emitterbase voltage ??? ??? v eb ????????? ????????? 5.0 ??? ??? vdc ??????????? ??????????? collector current e continuous peak ??? ??? i c ????????? ????????? 6 10 ??? ??? adc ??????????? ??????????? base current ??? ??? i b ????????? ????????? 2.0 ??? ??? adc ??????????? ? ????????? ? ? ????????? ? ??????????? total power dissipation @ t c = 25 c derate above 25 c ??? ? ? ? ? ? ? ??? p d ????????? ? ??????? ? ? ??????? ? ????????? 65 0.52 ??? ? ? ? ? ? ? ??? watts w/ c ??????????? ? ????????? ? ??????????? total power dissipation @ t a = 25 c derate above 25 c ??? ? ? ? ??? p d ????????? ? ??????? ? ????????? 2.0 0.016 ??? ? ? ? ??? watts w/ c ??????????? ??????????? unclamped inductive load energy (1) ??? ??? e ????????? ????????? 62.5 ??? ??? mj ??????????? ? ????????? ? ??????????? operating and storage junction temperature range ??? ? ? ? ??? t j , t stg ????????? ? ??????? ? ????????? 65 to +150 ??? ? ? ? ??? c ??????????????????????? ??????????????????????? thermal characteristics ???????????? ???????????? characteristic ????? ????? symbol ?????? ?????? max ??? ??? unit ???????????? ???????????? thermal resistance, junction to ambient ????? ????? r q ja ?????? ?????? 62.5 ??? ??? c/w ???????????? ???????????? thermal resistance, junction to case ????? ????? r q jc ?????? ?????? 1.92 ??? ??? c/w (1) i c = 2.5 a, l = 20 mh, p.r.f. = 10 hz, v cc = 10 v, r be = 100 w . preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2002 april, 2002 rev. 4 1 publication order number: tip41a/d tip41a tip41b tip41c tip42a tip42b tip42c 6 ampere power transistors complementary silicon 6080100 volts 65 watts *on semiconductor preferred device * npn pnp * * * case 221a09 to220ab style 1: pin 1. base 2. collector 3. emitter 4. collector 1 2 3 4
tip41a tip41b tip41c tip42a tip42b tip42c http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter sustaining voltage (1) tip41a, tip42a (i c = 30 madc, i b = 0) tip41b, tip42b tip41c, tip42c ????? ? ??? ? ????? v ceo(sus) ??? ? ? ? ??? 60 80 100 ???? ? ?? ? ???? e e e ??? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? collector cutoff current tip41a, tip42a (v ce = 30 vdc, i b = 0) tip41b, tip41c (v ce = 60 vdc, i b = 0) tip42b, tip42c ????? ? ??? ? ????? i ceo ??? ? ? ? ??? e e e ???? ? ?? ? ???? 0.7 0.7 0.7 ??? ? ? ? ??? madc ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = 60 vdc, v eb = 0) tip41a, tip42a (v ce = 80 vdc, v eb = 0) tip41b, tip42b (v ce = 100 vdc, v eb = 0) tip41c, tip42c ????? ? ??? ? ? ??? ? ????? i ces ??? ? ? ? ? ? ? ??? e e e ???? ? ?? ? ? ?? ? ???? 400 400 400 ??? ? ? ? ? ? ? ??? m adc ?????????????????????? ?????????????????????? emitter cutoff current (v be = 5.0 vdc, i c = 0) ????? ????? i ebo ??? ??? e ???? ???? 1.0 ??? ??? madc ????????????????????????????????? ????????????????????????????????? on characteristics (1) ?????????????????????? ?????????????????????? dc current gain (i c = 0.3 adc, v ce = 4.0 vdc) dc current gain (i c = 3.0 adc, v ce = 4.0 vdc) ????? ????? h fe ??? ??? 30 15 ???? ???? e 75 ??? ??? e ?????????????????????? ?????????????????????? collectoremitter saturation voltage (i c = 6.0 adc, i b = 600 madc) ????? ????? v ce(sat) ??? ??? e ???? ???? 1.5 ??? ??? vdc ?????????????????????? ?????????????????????? baseemitter on voltage (i c = 6.0 adc, v ce = 4.0 vdc) ????? ????? v be(on) ??? ??? e ???? ???? 2.0 ??? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ?????????????????????? currentgain e bandwidth product (i c = 500 madc, v ce = 10 vdc, f test = 1.0 mhz) ????? ????? f t ??? ??? 3.0 ???? ???? e ??? ??? mhz ?????????????????????? ?????????????????????? smallsignal current gain (i c = 0.5 adc, v ce = 10 vdc, f = 1.0 khz) ????? ????? h fe ??? ??? 20 ???? ???? e ??? ??? e (1) pulse test: pulse width 300 m s, duty cycle 2.0%.
tip41a tip41b tip41c tip42a tip42b tip42c http://onsemi.com 3 figure 1. power derating t, temperature ( c) 0 100 0 20 160 40 60 60 80 40 140 80 figure 2. switching time test circuit 0.06 figure 3. turnon time i c , collector current (amp) 0.02 0.4 6.0 0.07 1.0 4.0 t j = 25 c v cc = 30 v i c /i b = 10 t, time (s) m 0.5 0.3 0.1 0.05 0.1 0.6 1.0 t d @ v be(off) 5.0 v 0.03 0.7 2.0 0.2 2.0 t r 20 120 p d , power dissipation (watts) t c t c 0 1.0 2.0 3.0 4.0 t a t a +11 v 25 m s 0 -9.0 v r b -4 v d 1 scope v cc +30 v r c t r , t f 10 ns duty cycle = 1.0% r b and r c varied to obtain desired current levels d 1 must be fast recovery type, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma 0.2
tip41a tip41b tip41c tip42a tip42b tip42c http://onsemi.com 4 t, time (ms) 1.0 0.01 0.01 0.1 r(t), transient thermal resistance (normalized) 1.0 1.0 100 z q jc(t) = r(t) r q jc r q jc = 1.92 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z q jc(t) p (pk) t 1 t 2 single pulse 1.0 k d = 0.5 0.2 0.05 duty cycle, d = t 1 /t 2 figure 4. thermal response 0.1 0.05 0.02 0.01 0.03 0.02 0.07 0.5 0.3 0.2 0.7 0.02 0.05 0.2 0.5 2.0 5.0 200 500 10 20 50 v ce , collector-emitter voltage (volts) 10 20 5.0 60 100 figure 5. activeregion safe operating area 0.2 0.1 0.5 secondary breakdown ltd bonding wire ltd thermal limitation @ t c = 25 c (single pulse) 1.0ms 2.0 1.0 10 5.0 i c , collector current (amp) 0.5ms curves apply below rated v ceo 3.0 0.3 40 80 5.0ms t j = 150 c tip41a, tip42a tip41b, tip42b tip41c, tip42c there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 5 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 4. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 0.1 0.4 0.6 4.0 0.06 1.0 2.0 0.2 i c , collector current (amp) figure 6. turnoff time 5.0 t, time (s) m 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 6.0 1.0 3.0 5.0 20 0.5 10 2.0 v r , reverse voltage (volts) figure 7. capacitance 300 c, capacitance (pf) 200 100 70 50 30 30 50 t j = 25 c v cc = 30 v i c /i b = 10 i b1 = i b2 c ib c ob 3.0 t s t f t j = 25 c
tip41a tip41b tip41c tip42a tip42b tip42c http://onsemi.com 5 v ce , collector-emitter voltage (volts) t j , junction temperature ( c) 10 3 -0.3 10 1 10 0 10 -2 10 2 10 -1 10 -3 10m 100k 10k 0.1k 1.0m 1.0k i b , base current (ma) i c , collector current (amp) h fe , dc current gain figure 8. dc current gain figure 9. collector saturation region i c , collector current (amp) 300 500 0.1 0.2 0.4 6.0 0.06 100 70 50 30 10 7.0 0.3 v be , base-emitter voltage (volts) figure 10. aono voltages v ce = 2.0 v 5.0 1.0 2.0 0.6 1.6 2.0 20 30 100 1000 10 0.8 0.4 50 0 300 500 200 25 c t j = 150 c -55 c 1.2 2.0 0.06 i c , collector current (amp) 1.6 0.8 1.2 0.4 0 0.1 0.2 0.3 0.4 0.6 1.0 +2.5 i c = 1.0 a 20 60 80 100 120 160 140 40 v, voltage (volts) t j = 25 c 2.5 a 5.0 a 2.0 3.0 4.0 6.0 v be(sat) @ i c /i b = 10 v be @ v ce = 4.0 v v ce(sat) @ i c /i b = 10 v , temperature coefficients (mv/ c) q +2.0 +1.5 +1.0 +0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 *applies for i c /i b h fe /4 * q vc for v ce(sat) q vb for v be figure 11. temperature coefficients , collector current (a) m i c -0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 figure 12. collector cutoff region figure 13. effects of baseemitter resistance v ce = 30 v t j = 150 c 100 c 25 c reverse forward i c = i ces r be , external base-emitter resistance (ohms) v ce = 30 v i c = 10 x i ces i c i ces i c = 2 x i ces (typical i ces values obtained from figure 12) 200 20 4.0 0.06 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 6.0 +25 c to +150 c -55 c to +25 c +25 c to +150 c -55 c to +25 c +0.7 t j = 25 c
tip41a tip41b tip41c tip42a tip42b tip42c http://onsemi.com 6 package dimensions case 221a09 issue aa to220ab notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j style 1: pin 1. base 2. collector 3. emitter 4. collector
tip41a tip41b tip41c tip42a tip42b tip42c http://onsemi.com 7 notes
tip41a tip41b tip41c tip42a tip42b tip42c http://onsemi.com 8 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. tip41a/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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